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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	40V
Drain current	6A
Pulsed drain current	20A
Power dissipation	20.8W
Case	PowerPAK® 1212-8
Gate-source voltage	±20V
On-state resistance	39mΩ
Mounting	SMD
Gate charge	19nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7216DN-T1-E3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 6A; Idm: 20A

Specification