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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	60V
Drain current	4.8A
Pulsed drain current	20A
Power dissipation	2.6W
Case	PowerPAK® 1212-8
Gate-source voltage	±20V
On-state resistance	75mΩ
Mounting	SMD
Gate charge	20nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7220DN-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 4.8A; Idm: 20A

Specification