SI7252DP-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W
Manufacturer: VISHAY
Manufacturer part number:
SI7252DP-T1-GE3
TME Symbol:
SI7252DP-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 29.2A | |
Pulsed drain current | 80A | |
Power dissipation | 29W | |
Case | PowerPAK® SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 21mΩ | |
Mounting | SMD | |
Gate charge | 27nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight1 g
Certificates
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* SI7252DP-T1-GE3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 1.00 USDGross price for quantities from 3000 pcs - 1.00 USD