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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-40V
Drain current	-11A
Pulsed drain current	-60A
Power dissipation	1.2W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	9.2mΩ
Mounting	SMD
Gate charge	0.14µC
Kind of package	reel, tape
Kind of channel	enhancement

SI7463DP-T1-E3

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -11A; Idm: -60A

Specification

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