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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	200V
Drain current	2.8A
Pulsed drain current	8A
Power dissipation	4.2W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	0.26Ω
Mounting	SMD
Gate charge	18nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7464DP-T1-E3

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.8A; Idm: 8A

Specification