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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-100V
Drain current	-28A
Pulsed drain current	-40A
Power dissipation	53W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	41mΩ
Mounting	SMD
Gate charge	160nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7489DP-T1-E3

Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -28A; Idm: -40A

Specification