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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	8.5A
Pulsed drain current	30A
Power dissipation	3.1W
Case	PowerPAK® 1212-8
Gate-source voltage	±12V
On-state resistance	36mΩ
Mounting	SMD
Gate charge	16nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7900AEDN-T1-E3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 8.5A; Idm: 30A

Specification