SI7922DN-T1-E3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 2.5A; Idm: 10A
Manufacturer: VISHAY
Manufacturer part number:
SI7922DN-T1-E3
TME Symbol:
SI7922DN-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 2.5A | |
Pulsed drain current | 10A | |
Power dissipation | 2.6W | |
Case | PowerPAK® 1212-8 | |
Gate-source voltage | ±20V | |
On-state resistance | 0.23Ω | |
Mounting | SMD | |
Gate charge | 8nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI7922DN-T1-E3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.63 USDGross price for quantities from 3000 pcs - 0.63 USD
Net price for quantities from 6000 pcs - 0.60 USDGross price for quantities from 6000 pcs - 0.60 USD