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Manufacturer	VISHAY
Type of transistor	P-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-6.4A
Pulsed drain current	-20A
Power dissipation	2.8W
Case	PowerPAK® 1212-8
Gate-source voltage	±20V
On-state resistance	75mΩ
Mounting	SMD
Gate charge	21nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7923DN-T1-GE3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -6.4A; 2.8W

Specification