SI7949DP-T1-E3
Transistor: P-MOSFET x2; TrenchFET®; unipolar; -60V; -3.2A; 0.94W
Manufacturer: VISHAY
Manufacturer part number:
SI7949DP-T1-E3
TME Symbol:
SI7949DP-T1-E3
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -60V | |
Drain current | -3.2A | |
Pulsed drain current | -25A | |
Power dissipation | 0.94W | |
Case | PowerPAK® SO8 | |
Gate-source voltage | ±20V | |
On-state resistance | 64mΩ | |
Mounting | SMD | |
Gate charge | 40nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SI7949DP-T1-E3No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.70 USDGross price for quantities from 3000 pcs - 0.70 USD
Net price for quantities from 6000 pcs - 0.68 USDGross price for quantities from 6000 pcs - 0.68 USD