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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-4.9A
Pulsed drain current	-10A
Power dissipation	2.77W
Case	MICROFOOT® 1.6x1.6
Gate-source voltage	±12V
On-state resistance	95mΩ
Mounting	SMD
Gate charge	17nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8401DB-T1-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.9A; Idm: -10A

Specification