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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	16A
Pulsed drain current	30A
Power dissipation	13W
Case	MICROFOOT® 1.6x1.6
Gate-source voltage	±8V
On-state resistance	42mΩ
Mounting	SMD
Gate charge	20nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8406DB-T2-E1

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16A; Idm: 30A; 13W

Specification