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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-6.3A
Pulsed drain current	-25A
Power dissipation	2.77W
Case	MICROFOOT® 1.6x1.6
Gate-source voltage	±12V
On-state resistance	65mΩ
Mounting	SMD
Gate charge	26nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8409DB-T1-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.3A; Idm: -25A

Specification