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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	8V
Drain current	5.4A
Pulsed drain current	20A
Power dissipation	1.8W
Case	MICROFOOT® 1.6x1.6
Gate-source voltage	±5V
On-state resistance	90mΩ
Mounting	SMD
Gate charge	13nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8466EDB-T2-E1

Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 5.4A; Idm: 20A; 1.8W

Specification