+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

Quick Buy Favourites

No U.S. Customs – Order from TME with Confidence

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-9.7A
Pulsed drain current	-30A
Power dissipation	2.8W
Case	MICROFOOT® 1.6x1.6
Gate-source voltage	±8V
On-state resistance	39mΩ
Mounting	SMD
Gate charge	81nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8481DB-T1-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9.7A; Idm: -30A

Specification