SI8483DB-T2-E1
Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -16A; Idm: -25A
Manufacturer: VISHAY
Manufacturer part number:
SI8483DB-T2-E1
TME Symbol:
SI8483DB-T2-E1
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -12V | |
Drain current | -16A | |
Pulsed drain current | -25A | |
Power dissipation | 13W | |
Case | MICROFOOT® 1.6x1.6 | |
Gate-source voltage | ±10V | |
On-state resistance | 92mΩ | |
Mounting | SMD | |
Gate charge | 65nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.001 g
Certificates
See other products in this category: SMD P channel transistors VISHAY,
* SI8483DB-T2-E1No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.27 USDGross price for quantities from 3000 pcs - 0.27 USD
Net price for quantities from 6000 pcs - 0.26 USDGross price for quantities from 6000 pcs - 0.26 USD