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SI8487DB-T1-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.4A; 1.8/0.73W

Manufacturer: VISHAY

Manufacturer part number:
SI8487DB-T1-E1
TME Symbol:
SI8487DB-T1-E1

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-30V
Drain current
-6.4A
Power dissipation
1.8/0.73W
Case
MICROFOOT® 1.6x1.6
Gate-source voltage
±12V
On-state resistance
45mΩ
Mounting
SMD
Gate charge
80nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.021 g
Certificates

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SI8487DB-T1-E1
0 in TME stock
Net price for quantities from 1 pcs - 0.91 USDGross price for quantities from 1 pcs - 0.91 USD
Net price for quantities from 10 pcs - 0.56 USDGross price for quantities from 10 pcs - 0.56 USD
Net price for quantities from 100 pcs - 0.36 USDGross price for quantities from 100 pcs - 0.36 USD
Net price for quantities from 500 pcs - 0.28 USDGross price for quantities from 500 pcs - 0.28 USD
Net price for quantities from 1000 pcs - 0.26 USDGross price for quantities from 1000 pcs - 0.26 USD
Net price for quantities from 3000 pcs - 0.24 USDGross price for quantities from 3000 pcs - 0.24 USD
No. of pieces (Multiplicity: 1)
Packaging method by the manufacturerReel = 3 000 pcs