SI8489EDB-T2-E1
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A
Manufacturer: VISHAY
Manufacturer part number:
SI8489EDB-T2-E1
TME Symbol:
SI8489EDB-T2-E1
Specification
Manufacturer | VISHAY | |
Type of transistor | P-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | -20V | |
Drain current | -5.4A | |
Pulsed drain current | -20A | |
Power dissipation | 1.8W | |
Case | MICROFOOT® | |
Gate-source voltage | ±12V | |
On-state resistance | 82mΩ | |
Mounting | SMD | |
Gate charge | 27nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight0.001 g
Certificates
See other products in this category: SMD P channel transistors VISHAY,
* SI8489EDB-T2-E1No. of pieces (Multiplicity: 3 000)
0 in TME stock
Net price for quantities from 3000 pcs - 0.22 USDGross price for quantities from 3000 pcs - 0.22 USD