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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-13A
Pulsed drain current	-20A
Power dissipation	13W
Case	MICROFOOT®
Gate-source voltage	±12V
On-state resistance	0.12Ω
Mounting	SMD
Gate charge	49nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8497DB-T2-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -13A; Idm: -20A

Specification