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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	8V
Drain current	3.5A
Pulsed drain current	15A
Power dissipation	0.9W
Case	MICROFOOT®
Gate-source voltage	±5V
On-state resistance	135mΩ
Mounting	SMD
Gate charge	6.5nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8802DB-T2-E1

Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A; 0.9W

Specification