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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	2.5A
Pulsed drain current	10A
Power dissipation	0.9W
Case	MICROFOOT®
Gate-source voltage	±8V
On-state resistance	0.165Ω
Mounting	SMD
Gate charge	10nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8808DB-T2-E1

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A

Specification