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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	20V
Drain current	2.9A
Pulsed drain current	15A
Power dissipation	0.9W
Case	MICROFOOT®
Gate-source voltage	±8V
On-state resistance	0.125Ω
Mounting	SMD
Gate charge	8nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8810EDB-T2-E1

Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A

Specification