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Manufacturer	VISHAY
Type of transistor	N/P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	12/-20V
Drain current	4.5/-4.5A
Power dissipation	7.8W
Case	PowerPAK® SC70
Gate-source voltage	±8V
On-state resistance	165/104mΩ
Mounting	SMD
Gate charge	25/16nC
Kind of package	reel, tape
Kind of channel	enhancement

SIA537EDJ-T1-GE3

Transistor: N/P-MOSFET; TrenchFET®; unipolar; 12/-20V; 4.5/-4.5A

Specification