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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	60A
Pulsed drain current	100A
Power dissipation	125W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	2.6mΩ
Mounting	SMD
Gate charge	160nC
Kind of package	reel, tape
Kind of channel	enhancement

SIE802DF-T1-E3

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 60A; Idm: 100A

Specification