SIHD2N80E-GE3
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Manufacturer: VISHAY
Manufacturer part number:
SIHD2N80E-GE3
TME Symbol:
SIHD2N80E-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET | |
Polarisation | unipolar | |
Drain-source voltage | 800V | |
Drain current | 1.8A | |
Pulsed drain current | 5A | |
Power dissipation | 62.5W | |
Case | DPAK, TO252 | |
Gate-source voltage | ±30V | |
On-state resistance | 2.75Ω | |
Mounting | SMD | |
Gate charge | 19.6nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight2 g
Certificates
See other products in this category: SMD N channel transistors VISHAY,
* SIHD2N80E-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 2.02 USDGross price for quantities from 1 pcs - 2.02 USD
Net price for quantities from 10 pcs - 1.33 USDGross price for quantities from 10 pcs - 1.33 USD
Net price for quantities from 30 pcs - 1.11 USDGross price for quantities from 30 pcs - 1.11 USD
Net price for quantities from 100 pcs - 0.91 USDGross price for quantities from 100 pcs - 0.91 USD
Net price for quantities from 300 pcs - 0.84 USDGross price for quantities from 300 pcs - 0.84 USD