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SIHFBF30S-GE3

Transistor: N-MOSFET; unipolar; 900V; 2.3A; Idm: 14A; 125W

Documentation EN
Product family

Manufacturer: VISHAY

Manufacturer part number:
SIHFBF30S-GE3
TME Symbol:
SIHFBF30S-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
900V
Drain current
2.3A
Pulsed drain current
14A
Power dissipation
125W
Case
D2PAK, TO263
Gate-source voltage
±20V
On-state resistance
3.7Ω
Mounting
SMD
Gate charge
78nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: SMD N channel transistors VISHAY,
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SIHFBF30S-GE3
0 in TME stock
Net price for quantities from 1 pcs - 2.53 USDGross price for quantities from 1 pcs - 2.53 USD
Net price for quantities from 10 pcs - 1.70 USDGross price for quantities from 10 pcs - 1.70 USD
Net price for quantities from 25 pcs - 1.45 USDGross price for quantities from 25 pcs - 1.45 USD
Net price for quantities from 100 pcs - 1.38 USDGross price for quantities from 100 pcs - 1.38 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Hardly available product