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SIHP186N60EF-GE3

Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 43A; 156W; TO220AB

Manufacturer: VISHAY

Manufacturer part number:
SIHP186N60EF-GE3
TME Symbol:
SIHP186N60EF-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
600V
Drain current
12A
Pulsed drain current
43A
Power dissipation
156W
Case
TO220AB
Gate-source voltage
±30V
On-state resistance
193mΩ
Mounting
THT
Gate charge
32nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors VISHAY,
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SIHP186N60EF-GE3
0 in TME stock
Net price for quantities from 1 pcs - 4.40 USDGross price for quantities from 1 pcs - 4.40 USD
Net price for quantities from 10 pcs - 3.03 USDGross price for quantities from 10 pcs - 3.03 USD
Net price for quantities from 25 pcs - 2.57 USDGross price for quantities from 25 pcs - 2.57 USD
No. of pieces (Multiplicity: 1)