SIRB40DP-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 40A; Idm: 100A
Manufacturer: VISHAY
Manufacturer part number:
SIRB40DP-T1-GE3
TME Symbol:
SIRB40DP-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 40V | |
Drain current | 40A | |
Pulsed drain current | 100A | |
Power dissipation | 29.6W | |
Case | PowerPAK® SO8 | |
Gate-source voltage | -16...20V | |
On-state resistance | 4.2mΩ | |
Mounting | SMD | |
Gate charge | 93nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SIRB40DP-T1-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 2.09 USDGross price for quantities from 1 pcs - 2.09 USD
Net price for quantities from 10 pcs - 1.41 USDGross price for quantities from 10 pcs - 1.41 USD
Net price for quantities from 100 pcs - 1.03 USDGross price for quantities from 100 pcs - 1.03 USD
Net price for quantities from 500 pcs - 0.86 USDGross price for quantities from 500 pcs - 0.86 USD
Net price for quantities from 1000 pcs - 0.81 USDGross price for quantities from 1000 pcs - 0.81 USD
Net price for quantities from 3000 pcs - 0.80 USDGross price for quantities from 3000 pcs - 0.80 USD