SIS932EDN-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Manufacturer: VISHAY
Manufacturer part number:
SIS932EDN-T1-GE3
TME Symbol:
SIS932EDN-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 30V | |
Drain current | 6A | |
Pulsed drain current | 40A | |
Power dissipation | 14.8W | |
Case | PowerPAK® 1212-8 | |
Gate-source voltage | ±12V | |
On-state resistance | 26mΩ | |
Mounting | SMD | |
Gate charge | 14nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SIS932EDN-T1-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 0.59 USDGross price for quantities from 1 pcs - 0.59 USD
Net price for quantities from 10 pcs - 0.42 USDGross price for quantities from 10 pcs - 0.42 USD
Net price for quantities from 100 pcs - 0.34 USDGross price for quantities from 100 pcs - 0.34 USD
Net price for quantities from 500 pcs - 0.29 USDGross price for quantities from 500 pcs - 0.29 USD
Net price for quantities from 1000 pcs - 0.28 USDGross price for quantities from 1000 pcs - 0.28 USD