SIS990DN-T1-GE3
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 9.7A; Idm: 20A
Manufacturer: VISHAY
Manufacturer part number:
SIS990DN-T1-GE3
TME Symbol:
SIS990DN-T1-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET x2 | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 100V | |
Drain current | 9.7A | |
Pulsed drain current | 20A | |
Power dissipation | 16W | |
Case | PowerPAK® 1212-8 | |
Gate-source voltage | ±20V | |
On-state resistance | 0.105Ω | |
Mounting | SMD | |
Gate charge | 8nC | |
Kind of package | reel, tape | |
Kind of channel | enhancement |
Gross weight1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
* SIS990DN-T1-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 1.41 USDGross price for quantities from 1 pcs - 1.41 USD
Net price for quantities from 10 pcs - 0.89 USDGross price for quantities from 10 pcs - 0.89 USD
Net price for quantities from 100 pcs - 0.60 USDGross price for quantities from 100 pcs - 0.60 USD
Net price for quantities from 500 pcs - 0.47 USDGross price for quantities from 500 pcs - 0.47 USD
Net price for quantities from 1000 pcs - 0.46 USDGross price for quantities from 1000 pcs - 0.46 USD