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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	86A
Pulsed drain current	190A
Power dissipation	44.4W
Case	PowerPAK® 1212-8
Gate-source voltage	-12...16V
On-state resistance	6mΩ
Mounting	SMD
Gate charge	60nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	common drain

SISF04DN-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 86A; Idm: 190A

Specification