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SISF20DN-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A

Manufacturer: VISHAY

Manufacturer part number:
SISF20DN-T1-GE3
TME Symbol:
SISF20DN-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
60V
Drain current
41A
Pulsed drain current
100A
Power dissipation
44.4W
Case
PowerPAK® 1212-8
Gate-source voltage
±20V
On-state resistance
18.5mΩ
Mounting
SMD
Gate charge
33nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight1 g
Certificates
See other products in this category: Multi channel transistors VISHAY,
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SISF20DN-T1-GE3
0 in TME stock
Net price for quantities from 1 pcs - 2.50 USDGross price for quantities from 1 pcs - 2.50 USD
Net price for quantities from 10 pcs - 1.76 USDGross price for quantities from 10 pcs - 1.76 USD
Net price for quantities from 50 pcs - 1.30 USDGross price for quantities from 50 pcs - 1.30 USD
Net price for quantities from 100 pcs - 1.16 USDGross price for quantities from 100 pcs - 1.16 USD
Net price for quantities from 125 pcs - 1.11 USDGross price for quantities from 125 pcs - 1.11 USD
Net price for quantities from 250 pcs - 1.05 USDGross price for quantities from 250 pcs - 1.05 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.