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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	30V
Drain current	36/69.3A
Pulsed drain current	100...150A
Power dissipation	16.7/31W
Case	PowerPAIR® 3x3
On-state resistance	14.03/6.7mΩ
Mounting	SMD
Gate charge	23.5/12.6nC
Kind of package	reel, tape
Kind of channel	enhancement

SIZ340BDT-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 36/69.3A

Specification