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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	500V
Drain current	0.5A
Pulsed drain current	2A
Power dissipation	2W
Case	SOP8
Gate-source voltage	±30V
On-state resistance	11.7Ω
Mounting	SMD
Gate charge	3.8nC
Kind of package	reel, tape
Kind of channel	enhancement

SP8K80TB1

Transistor: N-MOSFET; unipolar; 500V; 500mA; Idm: 2A; 2W; SOP8

Specification

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