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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SuperMesh™
Polarisation	unipolar
Drain-source voltage	40V
Drain current	80A
Pulsed drain current	320A
Power dissipation	110W
Case	D2PAK
Gate-source voltage	±20V
On-state resistance	4mΩ
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement

STB120N4F6

Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 320A; 110W; D2PAK

Specification

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