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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SuperMesh™
Polarisation	unipolar
Drain-source voltage	800V
Drain current	7.6A
Power dissipation	190W
Case	D2PAK
Gate-source voltage	±30V
On-state resistance	0.45Ω
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

STB13N80K5

Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD

Specification

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