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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SuperMesh™
Polarisation	unipolar
Drain-source voltage	600V
Drain current	0.76A
Power dissipation	27W
Case	DPAK
Gate-source voltage	±30V
On-state resistance	8Ω
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

STD1HN60K3

Transistor: N-MOSFET; unipolar; 600V; 0.76A; 27W; DPAK; ESD

Specification