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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	30A
Power dissipation	258W
Case	D2PAK
Gate-emitter voltage	±20V
Pulsed collector current	120A
Mounting	SMD
Gate charge	163nC
Kind of package	reel, tape
Features of semiconductor devices	integrated anti-parallel diode

STGB30V60DF

Transistor: IGBT; 600V; 30A; 258W; D2PAK

Specification

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