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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	10A
Power dissipation	62.5W
Case	DPAK
Gate-emitter voltage	±20V
Pulsed collector current	30A
Mounting	SMD
Gate charge	23nC
Kind of package	reel, tape
Features of semiconductor devices	integrated anti-parallel diode
Application	ignition systems

STGD10HF60KD

Transistor: IGBT; 600V; 10A; 62.5W; DPAK; ignition systems

Specification