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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	600V
Collector current	80A
Power dissipation	469W
Case	TO247-3
Gate-emitter voltage	±20V
Pulsed collector current	240A
Mounting	THT
Gate charge	448nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGW80V60DF

Transistor: IGBT; 600V; 80A; 469W; TO247-3

Specification