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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	1.2kV
Collector current	50A
Power dissipation	535W
Case	MAX247
Gate-emitter voltage	±20V
Pulsed collector current	200A
Mounting	THT
Gate charge	0.21µC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGYA50H120DF2

Transistor: IGBT; 1.2kV; 50A; 535W; MAX247

Specification