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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SuperMESH3™
Polarisation	unipolar
Drain-source voltage	620V
Drain current	2A
Power dissipation	70W
Case	I2PAK
Gate-source voltage	±30V
On-state resistance	2Ω
Mounting	THT
Kind of package	tube
Kind of channel	enhancement
Version	ESD

STI4N62K3

Transistor: N-MOSFET; SuperMESH3™; unipolar; 620V; 2A; 70W; I2PAK

Specification