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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ M6
Polarisation	unipolar
Drain-source voltage	600V
Drain current	25A
Pulsed drain current	140A
Power dissipation	250W
Case	TO247-4
Gate-source voltage	±25V
On-state resistance	69mΩ
Mounting	THT
Gate charge	57nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal
Version	ESD

STW48N60M6-4

Transistor: N-MOSFET; MDmesh™ M6; unipolar; 600V; 25A; Idm: 140A

Specification