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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ M9
Polarisation	unipolar
Drain-source voltage	600V
Drain current	39A
Pulsed drain current	250A
Power dissipation	321W
Case	TO247
Gate-source voltage	30V
On-state resistance	35mΩ
Mounting	THT
Gate charge	112nC
Kind of package	tube
Kind of channel	enhancement

STWA60N035M9

Transistor: N-MOSFET; MDmesh™ M9; unipolar; 600V; 39A; Idm: 250A

Specification