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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ M9
Polarisation	unipolar
Drain-source voltage	650V
Drain current	58A
Pulsed drain current	440A
Power dissipation	463W
Case	TO247
Gate-source voltage	±30V
On-state resistance	23mΩ
Mounting	THT
Gate charge	230nC
Kind of package	tube
Kind of channel	enhancement

STWA65N023M9

Transistor: N-MOSFET; MDmesh™ M9; unipolar; 650V; 58A; Idm: 440A

Specification