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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	200V
Drain current	90A
Pulsed drain current	240A
Power dissipation	375W
Case	D2PAK, TO263
Gate-source voltage	±20V
On-state resistance	16.5mΩ
Mounting	SMD
Gate charge	87nC
Kind of package	reel, tape
Kind of channel	enhancement

SUM90142E-GE3

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A

Specification