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SUP60030E-GE3

Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A


Manufacturer: VISHAY

Manufacturer part number:
SUP60030E-GE3
TME Symbol:
SUP60030E-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
80V
Drain current
120A
Pulsed drain current
250A
Power dissipation
375W
Case
TO220AB
Gate-source voltage
±20V
On-state resistance
3.6mΩ
Mounting
THT
Gate charge
141nC
Kind of package
tube
Kind of channel
enhancement
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors VISHAY,
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SUP60030E-GE3
0 in TME stock
Net price for quantities from 1 pcs - 4.34 USDGross price for quantities from 1 pcs - 4.34 USD
Net price for quantities from 10 pcs - 2.49 USDGross price for quantities from 10 pcs - 2.49 USD
Net price for quantities from 50 pcs - 2.25 USDGross price for quantities from 50 pcs - 2.25 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.