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Manufacturer	VISHAY
Type of transistor	N-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	100V
Drain current	50A
Pulsed drain current	120A
Power dissipation	125W
Case	TO220AB
Gate-source voltage	±20V
On-state resistance	9.3mΩ
Mounting	THT
Gate charge	50nC
Kind of package	tube
Kind of channel	enhancement

SUP70090E-GE3

Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A

Specification