SUP90100E-GE3
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Manufacturer: VISHAY
Manufacturer part number:
SUP90100E-GE3
TME Symbol:
SUP90100E-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET | |
Technology | TrenchFET® | |
Polarisation | unipolar | |
Drain-source voltage | 200V | |
Drain current | 150A | |
Pulsed drain current | 250A | |
Power dissipation | 375W | |
Case | TO220AB | |
Gate-source voltage | ±20V | |
On-state resistance | 12.4mΩ | |
Mounting | THT | |
Gate charge | 110nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight2 g
Certificates
See other products in this category: THT N channel transistors VISHAY,
* SUP90100E-GE3No. of pieces (Multiplicity: 50)
0 in TME stock
Net price for quantities from 50 pcs - 2.56 USDGross price for quantities from 50 pcs - 2.56 USD
Net price for quantities from 100 pcs - 2.54 USDGross price for quantities from 100 pcs - 2.54 USD