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Manufacturer	ONSEMI
Type of transistor	N-JFET / N-MOSFET
Technology	SiC
Polarisation	unipolar
Kind of transistor	cascode
Drain-source voltage	650V
Drain current	23A
Pulsed drain current	65A
Power dissipation	190W
Case	TO220-3
Gate-source voltage	±25V
On-state resistance	80mΩ
Mounting	THT
Gate charge	51nC
Kind of package	tube
Kind of channel	enhancement
Version	ESD

UJ3C065080T3S

Transistor: N-JFET / N-MOSFET; SiC; unipolar; cascode; 650V; 23A

Specification